企业动态
MOSFETs
| P/N | Package | Channel |
BVdss (V) |
Vgs (±V) |
VGS(th) max(V) |
Id (A) |
Rds(on) mΩ max |
Qg typ.(nC) |
Qgd typ.(nC) |
Ciss typ.(pF) |
|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ciss typ.(pF) |
|||||||||||||||
| 10V | 7V | 4.5V | 2.5V | 1.8V | |||||||||||
| LB04N10F | TO-263 | N | 100 | 20 | 4 | 180 | 3.5 | 108 | 36 | 7000 | 234 | ||||
| LB22N10E | TO-251 | N | 100 | 20 | 3 | 36 | 22 | 26 | 10.5 | 3.4 | 1503 | 6 | |||
| LBA5N10E | TO-251 | N | 100 | 20 | 3 | 10 | 150 | 175 | 18.8 | 4.5 | 1070 | 40 | |||
| LB14N10E | TO-251 | N | 100 | 30 | 4 | 40 | 14 | 39.3 | 3.1 | 3330 | 43 | ||||
| LB12N10E | TO-251 | N | 100 | 30 | 4 | 46 | 12 | 39 | 8.2 | 3226 | 29 | ||||
| LB14N10E | TO-251 | N | 100 | 20 | 3 | 62 | 14.6 | 20 | 64 | 11 | 4505 | 44 | |||
| LB12N10E | TO-251 | N | 100 | 20 | 3 | 68 | 12 | 15 | 23 | 8.2 | 2130 | 29 | |||
| LB85N10E | TO-251 | N | 100 | 20 | 3 | 72 | 8 | 10.5 | 48 | 2.2 | 3350 | 15 | |||
| LB0N10D | TO-252 | N | 100 | 20 | 3 | 3.5 | 220 | 260 | 20 | 5 | 858 | 16 | |||
| LB5N10D | TO-252 | N | 100 | 20 | 3 | 10 | 150 | 175 | 18.8 | 4.5 | 1070 | 40 | |||
| LB2N10D | TO-252 | N | 100 | 20 | 3 | 14 | 125 | 160 | 18.7 | 4.8 | 820 | 43 | |||
| LBA1N10D | TO-252 | N | 100 | 25 | 4 | 15 | 110 | 8.1 | 4 | 410 | 20 | ||||
